Osi laser diode inc.
Pin diode laser detector.
A pin diode p type intrinsic n type diode is a diode with a wide region of intrinsic semiconductor material undoped contained between a p type semiconductor and an n type semiconductor.
Pin photodiode has an intrinsic very lightly doped semiconductor region sandwiched between a p doped and an n doped region as shown below.
The most common semiconductor photodetector is the pin photodiode as shown below.
The pin photodiode structure allows high quantum efficiency and fast response for detection of photons in the 400nm to 1100nm range.
Ldi pinamps provide a low cost high performance miniature optical receiver module which integrates a high speed high responsivity low leakage current ingaas photodiode with a gaas transimpedance amplifier.
1310 nm and 1550 nm.
Silicon pin photodiodes are available with a wide variety of active areas to accommodate many varied applications.
A further use of the pin diode is as a photo detector photodetector or photo diode where its structure is particularly suited to absorbing light.
Rather than just having a p type and an n type layer the pin diode has three layers.
Silicon is commonly used as an inexpensive detector material in the vis range.
The following graph shows the detector response curve for different materials.
A pin diode comprises a near intrinsic semiconductor region usually the space charge region sandwiched between a p type diode and an n type substrate.
The pin diode receives its name from the fact that is has three main layers.
The advantage of a pin diode is that the depletion region exists almost completely within the intrinsic region which has a constant width or almost constant regardless of disturbances applied to the diode.
Silicon pin photodiodes are reverse biased pin diodes which detect light and generate current as a result.
A pin diode is a diode with a wide undoped intrinsic semiconductor region between a p type semiconductor and an n type semiconductor region.
The wide intrinsic region is in contrast to an ordinary p n diode the wide intrinsic region makes the pin diode an inferior rectifier one typical.
For higher demands ingaas is used.
Pin photodiodes convert light to current without a bias voltage having to be applied.
The diode in which the intrinsic layer of high resistivity is sandwiched between the p and n region of semiconductor material such type of diode is known as the pin diode.
The high resistive layer of the intrinsic region provides the large electric field between the p and n region.
The electric field induces because of the movement of the holes and the electrons.
The pin photodiode structure has an intrinsic layer within the depletion region which allows high quantum efficiency and fast response for detection of photons.
It covers the widest spectral range from the vis to the nir.
Silicon pin photodiodes are reverse biased pin diodes which detect light and generate current as a result.
Silicon pin photodiodes are available with a wide variety of active areas to accommodate many varied applications.
